Localization in elastic and inelastic scattering.
نویسندگان
چکیده
The degree of information localization in elastic and inelastic scattering is examined in the context of imaging zone axis crystals in the aberration corrected STEM. We show that detector geometry is a critical factor in determining the localization, and compare a number of different geometries. Experimental core loss line traces demonstrate strong EELS localization at the titanium L-edge, even in the presence of dynamical elastic scattering.
منابع مشابه
Magnetic scattering effects on magnetoresistance in a quasi-two-dimensional disordered electron system
Magnetic-impurity-scattering effects in a quasi-2D disordered electron system have been investigated theoretically with the diagrammatic techniques in perturbation theory. The analytical expressions for magnetoconductivities due to weak-localization effects have been obtained as functions of elastic, inelastic and magnetic scattering times. The relevant dimensional crossover behavior from 3D to...
متن کاملMeasurement of elastic electron-neutron scattering and inelastic electron-deuteron scattering cross sections at high momentum transfer.
We have measured inelastic electron-deuteron, electron-proton, and electron-aluminum cross sections at 10' in the kinematic region between-elastic deuteron scattering and the second resonance region at six beam energies between 9.8 and 21 GeV. The elastic electron-neutron cross section was extracted from the quasi-elastic data at Q2 = 2.5, 4.0, 6.0, 8.0 and 10.0 (GeV/c)'. The ratio of elastic c...
متن کاملFolding model analysis of elastic and inelastic proton scattering on Sulfur isotopes
The folding formalism for the nucleon-nucleus optical potential and inelastic form factor is applied to study elastic and inelastic proton scattering on 30−40S isotopes. A recently developed realistic density dependent M3Y interaction, well tested in the folding analysis of nucleus-nucleus elastic and inelastic scattering, is used as effective NN interaction. The nuclear ground state and transi...
متن کاملOn the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors
Based on the non-equilibrium Green’s function formalism the performance of carbon nanotube field-effect transistors has been studied. The effects of elastic and inelastic scattering on the device performance have been investigated. The results indicate that elastic scattering has a more detrimental effect on the device characteristics than inelastic scattering. Only for short devices the perfor...
متن کاملRigorous modeling of carbon nanotube transistors
Based on the non-equilibrium Green’s function formalism the performance of carbon nanotube field-effect transistors has been studied. The effects of elastic and inelastic scattering on the device performance have been investigated. The results indicate that elastic scattering has a more detrimental effect on the device characteristics than inelastic scattering. Only for short devices the perfor...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Ultramicroscopy
دوره 96 3-4 شماره
صفحات -
تاریخ انتشار 2003